| PART |
Description |
Maker |
| FDP083N15A |
N-Channel PowerTrench? MOSFET 150V, 105A, 8.3m
|
Fairchild Semiconductor
|
| IRFB42N20D |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=200V/ Rds(on)max=0.055ohm/ Id=44A)
|
International Rectifier
|
| IRFI630G IRFI630 IRFI630GPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=5.9A)
|
IRF[International Rectifier]
|
| IRKT106/12S90 IRKH106/16S90 IRKL106/16S90 IRKL106/ |
THYRISTOR MODULE|SCR DOUBLER|1.2KV V(RRM)|105A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.6KV V(RRM)|105A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.6KV V(RRM)|105A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.4KV V(RRM)|105A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.4KV五（无线资源管理）| 105A及我（翻译）
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|105A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 600V的五（无线资源管理）| 105A及我（翻译）
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|105A I(T) 晶闸管模块|倍增|半CNTLD |负| 600V的五（无线资源管理）| 105A及我（翻译）
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.4KV V(RRM)|105A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1.4KV五（无线资源管理）| 105A及我（翻译）
THYRISTOR MODULE|SCR DOUBLER|1.4KV V(RRM)|105A I(T) 晶闸管模块|可控硅倍增| 1.4KV五（无线资源管理）| 105A及我（翻译）
|
Infineon Technologies AG
Ecliptek, Corp.
|
| IRHNB8260 IRHNB3260 IRHNB4260 IRHNB7260 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
|
IRF[International Rectifier]
|
| IRF9630 IRF9630PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP 4.7PF 50V /-0.25PF C0G SMD-0402 TR-7-PA SN100 HIGH-FREQ
|
IRF[International Rectifier]
|
| IRFR9210 IRFU9210 |
-200V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)
HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
| IRF9640 IRF9640PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-11A)
|
IRF[International Rectifier]
|
| FQPF10N20C FQPF10N20CNL |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET 9.5 A, 200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRKV105 IRKU105_16A IRKU105_04A IRKU105_04AS90 IRK |
1200V 105A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
1200V 105A Center-Tap Common Cathode Phase Control Thyristor/Thyristor in a ADD-A-Pak package
1400V 105A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
1400V 105A Center-Tap Common Cathode Phase Control Thyristor/Thyristor in a ADD-A-Pak package
1600V 105A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
1600V 105A Center-Tap Common Cathode Phase Control Thyristor/Thyristor in a ADD-A-Pak package
800V 105A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
800V 105A Center-Tap Common Cathode Phase Control Thyristor/Thyristor in a ADD-A-Pak package
1000V 105A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
1000V 105A Center-Tap Common Cathode Phase Control Thyristor/Thyristor in a ADD-A-Pak package
ADD-A-pak GEN V Power Modules THYRISTOR/ THYRISTOR
|
IRF[International Rectifier]
|
| FQU5P20 FQD5P20 FQD5P20TM |
200V P-Channel QFET
200V P-Channel MOSFET 3.7 A, 200 V, 1.4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRFU210 IRFR210 IRFU210PBF IRFR210TRL IRFR210TRR |
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=2.6A)
|
IRF[International Rectifier]
|
